JAN2N5926
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N5926
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
1
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Internal Configuration
junction contact
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Semiconductor Material
silicon
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Power Rating Per Characteristic
350.0 watts maximum total power dissipation
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Special Features
junction pattern arrangement: npn
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Definitive Government Spec/Std Reference
jan2n5926
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Non-Definitive Government Spec/Std Reference
mil-s-19500/447
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Terminal Type And Quantity
3 tab, solder lug
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Overall Length
0.480 inches minimum and 0.535 inches maximum
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.847 inches minimum and 0.875 inches maximum
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Nominal Thread Size
0.250 inches
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Voltage Rating In Volts Per Characteristic
150.0 maximum collector to base voltage/static/emitter open and 120.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
50.00 amperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Manufacturers Code
81349
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Test Data Document
81349-mil-s-19500 specification
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Thread Series Designator
unf
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Specification/Standard Data
81349-mil-s-19500/447 government specification