SM-A-777704-2

Semiconductor Devices and Associated Hardware

TRANSISTOR

SM-A-777704-2

5961-01-072-1556

5961 - Semiconductor Devices and Associated Hardware

Us Army Communications &

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    1.550 inches maximum

  • Overall Height

    0.450 inches maximum

  • Internal Configuration

    junction contact-darlington connected

  • Channel Polarity And Control Type

    n-channel junction type

  • Internal Junction Configuration

    npn

  • ~1

    o emitter voltage 450vdc (vcex); collector to emitter voltage 450vdc (vcpl); emi

  • ~3

    rent peak 30.0adc; base current-continuous 10.0adc; base current-peak 20.0adc; e

  • ~4

    mitter current-continuous 25.0adc; emitter current-peak 50.0adc; total power dis

  • ~5

    sipation 175watts; total power dissipation at tc=100 deg celsius; 100 watts oper

  • ~7

    e; function to case 1.0 deg celsius w/maximum lead temp for soldering 275deg c

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • ~2

    tter to base voltage 9.0vdc; collector current-continuous 15.0adc; collector cur

  • ~6

    ating and storage function -65 deg celsius to +200 deg celsius thermal resistanc

  • Special Features

    power transistor ratings collector to emitter voltage 400vdc (vceo); collector t

  • Terminal Type And Quantity

    2 uninsulated wire lead

Certified to
AS6081 Methods

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Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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