2N1132

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N1132

5961-01-073-1704

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Transfer Ratio

    25.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter

  • Overall Length

    0.260 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-39

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    35.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    600.00 milliamperes source cutoff current maximum

  • Terminal Circle Diameter

    0.210 inches maximum

  • Inclosure Material

    metal

  • Power Rating Per Characteristic

    600.0 milliwatts small-signal input power, common-collector preset

  • Internal Junction Configuration

    pnp

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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