35821E-H27
Semiconductor Devices and Associated Hardware
TRANSISTOR
35821E-H27
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
35.00 milliamperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Precious Material And Location
terminals and lid surfaces gold
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Overall Diameter
0.204 inches minimum and 0.206 inches maximum
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Terminal Type And Quantity
4 ribbon
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Mounting Method
press fit
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
27.0 maximum collector to base voltage/static/emitter open and 20.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
700.0 milliwatts small-signal input power, common-collector preset
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Test Data Document
00752-404287 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Precious Material
gold
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Overall Length
0.025 inches minimum