1022167G1

Semiconductor Devices and Associated Hardware

TRANSISTOR

1022167G1

5961-01-074-3968

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Internal Junction Configuration

    npn

  • Power Rating Per Characteristic

    4.0 watts maximum collector power dissipation

  • Inclosure Material

    metal

  • Overall Length

    1.573 inches maximum

  • Overall Height

    0.450 inches maximum

  • Overall Width

    1.050 inches maximum

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    t0-3

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    700.0 maximum breakdown voltage,collector-to-base,emitter open and 5.0 maximum emitter to base voltage,static,collector open and 400.0 maximum breakdown voltage,collector-to-emitter,base open

  • Current Rating Per Characteristic

    3.50 amperes maximum collector current,dc and 2.00 amperes maximum base current,dc

  • Transfer Ratio

    90.0 maximum static forward current transfer ratio,common-emitter

  • Terminal Type And Quantity

    2 pin and 1 case

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AS6081 Methods

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