SN92912W-207
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
SN92912W-207
5962 - Microcircuits, Electronic
Texas Instruments Incorporated
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Word Quantity (Non-Core)
256
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Operating Temp Range
-55.0/+125.0 deg celsius
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Inclosure Configuration
flat pack
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Input Circuit Pattern
10 input
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Body Width
0.240 inches minimum and 0.325 inches maximum
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Terminal Surface Treatment
solder
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Test Data Document
b2577-932820 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Body Length
0.440 inches maximum
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Inclosure Material
ceramic and glass
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Features Provided
bipolar and schottky and programmed and programmable and w/storage and positive outputs and hermetically sealed and monolithic and 3-state output
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Terminal Type And Quantity
16 flat leads
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Bit Quantity (Non-Core)
024
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Voltage Rating And Type Per Characteristic
5.5 volts maximum power source
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Output Logic Form
transistor-transistor logic
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Body Height
0.085 inches maximum
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~1
maximum propagation delay time, high to low le
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Time Rating Per Chacteristic
35.00 nanoseconds maximum propagation delay time, low to high level output and 10.00 nanoseconds minimum propagation delay time, high to low level output and 5.00 nanoseconds minimum propagation delay time, low to high level output and 89.00 nanoseconds