SN92910W-205

Technical Characteristics

• Time Rating Per Chacteristic

  10.00 nanoseconds minimum propagation delay time, high to low level output and 5.00 nanoseconds minimum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, low to high level output and 89.00 nanoseconds

• ~1

  maximum propagation delay time, high to low le

• Features Provided

  bipolar and positive outputs and programmable and hermetically sealed and monolithic and w/storage and programmed and schottky and 3-state output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Input Circuit Pattern

  10 input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Width

  0.240 inches minimum and 0.325 inches maximum

• Terminal Surface Treatment

  solder

• Body Length

  0.440 inches maximum

• Inclosure Material

  ceramic and glass

• Terminal Type And Quantity

  16 flat leads

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  1024

• Body Height

  0.085 inches maximum

• Test Data Document

  82577-932820 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Word Quantity (Non-Core)

  256