SN54S287W

Technical Characteristics

• ~1

  maximum propagation delay time, high to low le

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 5.00 nanoseconds minimum propagation delay time, low to high level output and 10.00 nanoseconds minimum propagation delay time, high to low level output and 89.00 nanoseconds

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Input Circuit Pattern

  10 input

• Inclosure Configuration

  flat pack

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  256

• Test Data Document

  82577-932820 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Height

  0.085 inches maximum

• Bit Quantity (Non-Core)

  1024

• Output Logic Form

  transistor-transistor logic

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Features Provided

  positive outputs and bipolar and hermetically sealed and monolithic and w/storage and programmed and schottky and 3-state output

• Terminal Type And Quantity

  16 flat leads

• Inclosure Material

  ceramic and glass

• Body Length

  0.440 inches maximum

• Terminal Surface Treatment

  solder

• Body Width

  0.240 inches minimum and 0.325 inches maximum