C2114-2

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  200.00 nanoseconds maximum propagation delay time, low to high level output

• Bit Quantity (Non-Core)

  4096

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Word Quantity (Non-Core)

  1024

• Features Provided

  monolithic and 3-state output and w/decoded output and w/enable and hermetically sealed and positive outputs and w/storage

• Input Circuit Pattern

  16 input

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Body Length

  0.880 inches minimum and 0.920 inches maximum

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Inclosure Material

  ceramic and glass

• Terminal Type And Quantity

  18 printed circuit

• Body Height

  0.130 inches maximum

• Body Width

  0.280 inches minimum and 0.300 inches maximum