112SEB155

Technical Characteristics

• Voltage Rating In Volts Per Characteristic

  300.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 250.0 maximum breakdown voltage, collector-to-emitter, base open all transistor and 7.0 maximum breakdown voltage, emitter-to-base, collector

• ~1

  open all transistor

• Overall Length

  1.553 inches minimum all transistor and 1.573 inches maximum all transistor

• Internal Configuration

  junction contact all transistor

• Overall Width

  1.050 inches maximum all transistor

• Function For Which Designed

  switching

• Inclosure Material

  metal all transistor

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole all transistor

• Component Name And Quantity

  4 transistor

• Power Rating Per Characteristic

  90.0 watts small-signal input power, common-collector preset all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction all transistor

• Component Function Relationship

  matched

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3 all transistor

• Overall Height

  0.637 inches nominal all transistor

• Electrode Internally-Electrically Connected To Case

  collector all transistor

• Semiconductor Material

  silicon all transistor

• Internal Junction Configuration

  npn all transistor

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor

• Terminal Type And Quantity

  1 case all transistor and 2 pin all transistor