N82S123F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
N82S123F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Maximum Power Dissipation Rating
332.8 milliwatts
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Storage Temp Range
-65.0 to 150.0 deg celsius
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Features Provided
hermetically sealed and programmable and bipolar and w/enable
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Inclosure Material
ceramic
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Inclosure Configuration
dual-in-line
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Output Logic Form
transistor-transistor logic
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Word Quantity
32
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Time Rating Per Chacteristic
50.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output
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Unpackaged Unit Weight
2.2 grams
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Body Length
0.808 inches maximum
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Body Width
0.294 inches maximum
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Body Height
0.204 inches maximum
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Operating Temp Range
-0.0 to 75.0 deg celsius
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Input Circuit Pattern
6 input
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Bit Quantity
256
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Terminal Surface Treatment
solder
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Memory Device Type
rom
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Terminal Type And Quantity
16 printed circuit