10-19655-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
10-19655-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
0.70 milliamperes zero-gate-voltage source current absolute and 5.00 milliamperes zero-gate-voltage source current major
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Overall Height
0.345 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Facility Quantity
2
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Voltage Rating In Volts Per Characteristic
0.8 maximum base to emitter voltage, dc and 0.6 maximum collector to emitter voltage, dc
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Terminal Type And Quantity
1 case and 2 pin
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Semiconductor Material
silicon
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Power Rating Per Characteristic
115.0 watts small-signal input power, common-collector preset
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Overall Width
1.050 inches maximum
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Features Provided
hermetically sealed case
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Internal Configuration
junction contact
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Special Features
vbe and w are min ratings; lead length is 0.400 in. min; junction pattern arrangement: npn
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Overall Length
1.573 inches maximum
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Test Data Document
24429-10-19655 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)