D2316E

Technical Characteristics

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Features Provided

  burn in and static operation and 3-state output

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Bit Quantity

  16384

• Word Quantity

  2048

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Time Rating Per Chacteristic

  350.00 nanoseconds maximum propagation delay time, low to high level output and 350.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Operating Temp Range

  0.0 to 70.0 deg celsius

• Inclosure Material

  ceramic

• Input Circuit Pattern

  13 input

• Terminal Type And Quantity

  24 printed circuit