3N167
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N167
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 10.0 maximum drain to source voltage
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Power Rating Per Characteristic
225.0 milliwatts small-signal input power, common-collector preset
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Test Data Document
28815-17-123787 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum of standard range
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Terminal Length
0.500 inches minimum
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Internal Configuration
field effect