MSC81035M
Semiconductor Devices and Associated Hardware
TRANSISTOR
MSC81035M
5961 - Semiconductor Devices and Associated Hardware
Sgs-Thomson Microelectronics Inc
TRANSISTOR
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Technical Characteristics
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Inclosure Material
ceramic
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Voltage Rating In Volts Per Characteristic
55.0 nominal breakdown voltage, collector-to-base, emitter open
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Power Rating Per Characteristic
29.0 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Current Rating Per Characteristic
4.00 amperes source cutoff current maximum
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Terminal Type And Quantity
2 tab, solder lug
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Overall Length
0.210 inches nominal