7536771P0003
Semiconductor Devices and Associated Hardware
TRANSISTOR
7536771P0003
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
11.6 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Overall Diameter
0.300 inches minimum and 0.370 inches maximum
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter and 33.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open
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Test Data Document
99971-7536771 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Nominal Thread Size
0.164 inches
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.280 inches maximum
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Special Features
burn-in requirement,vce 4.5vdc,ic 0.71adc,168 hours min duration; junction pattern arrangement: npn
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Current Rating Per Characteristic
1.00 amperes source cutoff current maximum
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Inclosure Material
metal