FS341-1001-003H
Semiconductor Devices and Associated Hardware
TRANSISTOR
FS341-1001-003H
5961 - Semiconductor Devices and Associated Hardware
Bae Systems Mission Systems Gfa
TRANSISTOR
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Technical Characteristics
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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~1
data on certain environmental and performanc
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Inclosure Material
metal
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Precious Material And Location
terminal surface option gold
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Internal Configuration
field effect
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Terminal Length
0.500 inches minimum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-205ad
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Semiconductor Material
silicon
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Electrode Internally-Electrically Connected To Case
drain
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Current Rating Per Characteristic
3.00 amperes forward current, average any acceptable
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Voltage Rating In Volts Per Characteristic
60.0 maximum drain to source voltage and 20.0 maximum gate to source voltage
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Mounting Method
terminal
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Power Rating Per Characteristic
6.25 watts small-signal input power, common-collector preset
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Specification/Standard Data
81349-mil-s-19500/547 government specification
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Terminal Type And Quantity
3 uninsulated wire lead
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Diameter
0.350 inches minimum and 0.370 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air