2N5979
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5979
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Width
0.520 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum emitter to base voltage, static, collector open and 80.0 maximum collector to emitter voltage/static/base open
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Semiconductor Material
silicon
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Overall Length
0.658 inches maximum
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector minimum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum
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Overall Height
0.150 inches maximum
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Specification/Standard Data
80131-release6362 professional/industrial association specification
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction