SES495

Technical Characteristics

• Internal Configuration

  junction contact-darlington connected

• Inclosure Material

  metal

• Overall Width Across Flats

  0.687 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61

• Nominal Thread Size

  0.250 inches

• Voltage Rating In Volts Per Characteristic

  400.0 maximum breakdown voltage, collector-to-emitter, base open and 500.0 maximum breakdown voltage, collector-to-base, emitter open and 8.0 maximum breakdown voltage, emitter-to-base, collector open

• Mounting Method

  threaded stud

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Facility Quantity

  1

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector absolute

• Current Rating Per Characteristic

  20.00 amperes source cutoff current maximum and 2.50 amperes source cutoff current minimum

• Thread Series Designator

  unf

• Special Features

  junction pattern arrangement: pnp

• Overall Length

  0.460 inches maximum

• Terminal Type And Quantity

  3 tab, solder lug

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Overall Diameter

  0.610 inches maximum