2N5004
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5004
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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Overall Diameter
0.380 inches maximum
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Overall Length
0.468 inches maximum
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Inclosure Material
metal
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.437 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-emitter, base open
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Mounting Facility Quantity
1
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-59
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Mounting Method
threaded stud
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Nominal Thread Size
0.190 inches
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Current Rating Per Characteristic
5.00 amperes maximum collector current, dc and 2.00 amperes maximum base current, dc
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Power Rating Per Characteristic
50.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 3 tab, solder lug