2N6661/750
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6661/750
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Current Rating Per Characteristic
10.00 microamperes zero-gate-voltage source current megawatts and 500.00 microamperes zero-gate-voltage source current megawatts
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Features Provided
hermetically sealed case
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Internal Junction Configuration
pin
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
2.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 1.6 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source
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Internal Configuration
junction contact-darlington connected
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Terminal Type And Quantity
3 pin
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Terminal Length
0.500 inches nominal
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Inclosure Material
metal
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Power Rating Per Characteristic
8.3 watts small-signal input power, common-collector minimum