581R675H04
Semiconductor Devices and Associated Hardware
TRANSISTOR
581R675H04
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Special Features
junction pattern arrangement: npn
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Overall Width
1.050 inches maximum
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Overall Height
0.350 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
160.0 watts small-signal input power, common-collector absolute
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Overall Length
1.550 inches maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Internal Configuration
junction contact-darlington connected
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Current Rating Per Characteristic
20.00 amperes source cutoff current maximum and 500.00 milliamperes source cutoff current minimum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Test Data Document
97942-581r675 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Terminal Length
0.460 inches nominal
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to emitter voltage/static/base open and 100.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc