900A534-3
Semiconductor Devices and Associated Hardware
TRANSISTOR
900A534-3
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Test Data Document
83843-900a534 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum and 10.00 amperes source cutoff current minimum
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Voltage Rating In Volts Per Characteristic
225.0 maximum collector to base voltage, dc and 200.0 maximum collector to emitter voltage, dc and 7.0 maximum emitter to base voltage, dc
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Overall Length
0.450 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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~1
data on certain environmental and performance re