SRF820H

Technical Characteristics

• Internal Configuration

  junction contact all transistor

• Internal Junction Configuration

  npn all transistor

• Semiconductor Material

  silicon all transistor

• ~1

  ector to emitter voltage/static/base open and 65.0 maximum collector to emitter

• ~3

  voltage, static, collector open all transistor

• Power Rating Per Characteristic

  140.0 watts maximum total device dissipation all transistor

• Component Function Relationship

  matched

• Component Name And Quantity

  4 transistor

• ~2

  voltage, dc with base short-circuited to emitter and 4.0 maximum emitter to base

• Voltage Rating In Volts Per Characteristic

  65.0 maximum collector to base voltage/static/emitter open and 33.0 maximum coll

• Current Rating Per Characteristic

  8.00 amperes maximum collector current, dc all transistor

• ~1

  ise open components without taking adequate safeguards,material contained within

• ~2

  may be injurious to your health

• Special Features

  transistors contain beryllium oxide; do not polish,cross section,grind or otherw