TN2009

Technical Characteristics

• Overall Length

  0.340 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-66

• Precious Material

  gold

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  4.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum

• Mounting Facility Quantity

  2

• Overall Diameter

  0.620 inches maximum

• Inclosure Material

  metal

• Mounting Method

  unthreaded hole

• Voltage Rating In Volts Per Characteristic

  90.0 maximum breakdown voltage, collector-to-base, emitter open

• Precious Material And Location

  leads coating gold

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case