MJ10016
Semiconductor Devices and Associated Hardware
TRANSISTOR
MJ10016
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
0.250 inches minimum and 0.300 inches maximum
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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Power Rating Per Characteristic
250.0 watts small-signal input power, common-collector absolute
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Mounting Method
unthreaded hole
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Overall Diameter
0.760 inches minimum and 0.830 inches maximum
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Inclosure Material
metal
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Current Rating Per Characteristic
10.00 amperes source cutoff current minimum and 50.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
700.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 500.0 maximum breakdown voltage, collector to emitter, sustained and 8.0 maximum emitter to base voltage, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Electrode Internally-Electrically Connected To Case
collector