CD3579
Semiconductor Devices and Associated Hardware
TRANSISTOR
CD3579
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
ceramic
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Overall Diameter
0.300 inches maximum
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.164 inches
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Overall Length
0.130 inches minimum and 0.160 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 3.5 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
0.25 amperes maximum collector current, dc
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Power Rating Per Characteristic
5.0 watts maximum total power dissipation
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Thread Series Designator
unc
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Terminal Type And Quantity
4 ribbon