149C030H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
149C030H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Criticality Code Justification
feat
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Overall Length
1.573 inches maximum
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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End Item Identification
strategic weapon systems (poseidon and trident); nimitz class cvn; aircraft, galaxy c-5; usns stalwart class tagos; integrated underwater surviellance systems; forrestal class cv; missile, air launch xruise (alcm) agm-86b
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Overall Width
0.875 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector minimum
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Specification/Standard Data
80131-release6314 professional/industrial association specification
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Height
0.450 inches maximum
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Current Rating Per Characteristic
7.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum