13220E4147

Semiconductor Devices and Associated Hardware

TRANSISTOR

13220E4147

5961-01-093-6458

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Special Features

    junction pattern arrangement: pnp

  • Test Data Document

    97403-13220e4147 drawing

  • Mounting Method

    unthreaded hole

  • Internal Configuration

    junction contact

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    1 case and 2 pin

  • Power Rating Per Characteristic

    200.0 watts maximum total device dissipation

  • Current Rating Per Characteristic

    7.50 amperes maximum base current, dc and 25.00 amperes maximum collector current, dc

  • Electrode Internally-Electrically Connected To Case

    collector

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Mounting Facility Quantity

    2

  • Overall Diameter

    0.875 inches maximum

  • Overall Length

    0.250 inches minimum and 0.450 inches maximum

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AS6081 Methods

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