2N5883

Technical Characteristics

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Special Features

  junction pattern arrangement: pnp

• Test Data Document

  97403-13220e4147 drawing

• Mounting Method

  unthreaded hole

• Internal Configuration

  junction contact

• Inclosure Material

  metal

• Terminal Type And Quantity

  1 case and 2 pin

• Power Rating Per Characteristic

  200.0 watts maximum total device dissipation

• Current Rating Per Characteristic

  7.50 amperes maximum base current, dc and 25.00 amperes maximum collector current, dc

• Electrode Internally-Electrically Connected To Case

  collector

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Mounting Facility Quantity

  2

• Overall Diameter

  0.875 inches maximum

• Overall Length

  0.250 inches minimum and 0.450 inches maximum