MS1700G
Semiconductor Devices and Associated Hardware
TRANSISTOR
MS1700G
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
85.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open
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Inclosure Material
metal
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Special Features
minimum voltage; junction pattern arrangement: npn
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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