1TS30893
Semiconductor Devices and Associated Hardware
TRANSISTOR
1TS30893
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal
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Power Rating Per Characteristic
350.0 milliwatts small-signal input power, common-collector absolute
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
30.0 maximum drain to gate voltage
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Internal Configuration
field effect-dual gate
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Precious Material
gold
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Precious Material And Location
terminal surfaces gold
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Current Rating Per Characteristic
1.00 microamperes source cutoff current minor
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Diameter
0.208 inches minimum and 0.230 inches maximum
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Test Data Document
30003-247as-c0493 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction