102A802P2
Semiconductor Devices and Associated Hardware
TRANSISTOR
102A802P2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
450.0 maximum collector-to-emitter substaining voltage, with specified circuit between base and emitter and 400.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 850.0 maximum collector to emitter voltage, dc and 9.0 maximum
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~1
emitter to base voltage, dc
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
8.00 amperes source cutoff current minimum and 8.00 amperes source cutoff current maximum
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector preset
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Overall Length
1.573 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204aa
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Height
0.450 inches maximum