PP7721-1

Technical Characteristics

• Component Function Relationship

  matched

• Power Rating Per Characteristic

  30.0 watts large-signal input power, common-emitter minimum all transistor

• Special Features

  subject transistor set is compound connected

• Semiconductor Material

  silicon all transistor

• Internal Junction Configuration

  npn all transistor

• Features Provided

  hermetically sealed case

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air all transistor

• Terminal Type And Quantity

  3 tab, solder lug all transistor

• Function For Which Designed

  amplifier

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor

• Internal Configuration

  junction contact all transistor

• Thread Series Designator

  unf all transistor

• Inclosure Material

  metal all transistor

• Component Name And Quantity

  2 transistor

• Overall Width Across Flats

  0.424 inches minimum all transistor and 0.437 inches maximum all transistor

• Nominal Thread Size

  0.190 inches all transistor

• Voltage Rating In Volts Per Characteristic

  15.0 maximum emitter to base voltage, static, collector open all transistor and 80.0 maximum collector to base voltage/static/emitter open all transistor and 60.0 maximum breakdown voltage, collector to emitter, sustained all transistor

• Mounting Method

  threaded stud all transistor

• Overall Length

  0.970 inches minimum all transistor and 1.218 inches maximum all transistor

• Mounting Facility Quantity

  2 all transistor