584R529H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
584R529H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.230 inches maximum
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Mounting Method
press fit
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 3.0 maximum emitter to base voltage, dc
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Power Rating Per Characteristic
10.3 watts maximum reverse power dissipation, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Special Features
junction pattern arrangement: npn
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Iii Precious Material And Location
terminals surfaces gold
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Iii Precious Material
gold
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Terminal Type And Quantity
4 flange
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Overall Diameter
0.405 inches nominal
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
5.00 milliamperes maximum collector cutoff current, dc, with base short-circuited to emitter