584R529H01

Semiconductor Devices and Associated Hardware

TRANSISTOR

584R529H01

5961-01-096-8155

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Systems Corporation

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.230 inches maximum

  • Mounting Method

    press fit

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 3.0 maximum emitter to base voltage, dc

  • Power Rating Per Characteristic

    10.3 watts maximum reverse power dissipation, dc

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Special Features

    junction pattern arrangement: npn

  • Iii Precious Material And Location

    terminals surfaces gold

  • Iii Precious Material

    gold

  • Terminal Type And Quantity

    4 flange

  • Overall Diameter

    0.405 inches nominal

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    5.00 milliamperes maximum collector cutoff current, dc, with base short-circuited to emitter

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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