1990-0331

Technical Characteristics

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Function For Which Designed

  phototransistor

• Terminal Circle Diameter

  0.100 inches nominal

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  0.10 microamperes maximum collector cutoff current, dc, base open

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air

• Special Features

  junction pattern arrangement: npn

• Iii Precious Material And Location

  terminal surfaces gold

• Iii Precious Material

  gold

• Internal Configuration

  junction contact

• Mounting Method

  terminal

• Voltage Rating In Volts Per Characteristic

  30.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to collector voltage, dc and 40.0 maximum collector to base voltage, dc

• Power Rating Per Characteristic

  400.0 milliwatts maximum total power dissipation

• Terminal Type And Quantity

  3 uninsulated wire lead

• Inclosure Material

  metal and glass

• Overall Length

  0.190 inches minimum

• Terminal Length

  0.500 inches minimum