584R531H01

Technical Characteristics

• Inclosure Material

  metal

• Overall Diameter

  0.405 inches nominal

• Mounting Facility Quantity

  2

• Internal Configuration

  junction contact

• Internal Junction Configuration

  npn

• Mounting Method

  unthreaded hole

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  40.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 3.0 maximum emitter to base voltage,dc

• Power Rating Per Characteristic

  18.4 watts maximum reverse power dissipation,dc

• Precious Material And Location

  terminal surfaces gold

• Test Data Document

  97942-584r531 drawing

• Overall Length

  0.230 inches maximum

• Features Provided

  gold plated leads and hermetically sealed case

• Current Rating Per Characteristic

  5.00 milliamperes maximum collector cutoff current,dc,with base short-circuited to emitter

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Precious Material

  gold

• Terminal Type And Quantity

  1 flange and 2 pin