200920-003

Semiconductor Devices and Associated Hardware

TRANSISTOR

200920-003

5961-01-097-9016

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

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Technical Characteristics

  • Special Features

    junction pattern arrangement: npn

  • Power Rating Per Characteristic

    6.0 watts maximum total power dissipation

  • Current Rating Per Characteristic

    30.00 amperes maximum collector current, dc and 7.50 amperes maximum base current, dc

  • Mounting Method

    unthreaded hole

  • Mounting Facility Quantity

    2

  • Overall Width

    1.050 inches maximum

  • Overall Height

    0.270 inches minimum and 0.380 inches maximum

  • Overall Length

    1.573 inches maximum

  • Terminal Type And Quantity

    1 case and 2 pin

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum collector to base voltage/static/emitter open and 40.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open

  • Semiconductor Material

    silicon

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Configuration

    junction contact

  • End Item Identification

    an/alr-56

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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