ECG-165

Semiconductor Devices and Associated Hardware

TRANSISTOR

ECG-165

5961-01-098-0841

5961 - Semiconductor Devices and Associated Hardware

Philips Ecg Inc

TRANSISTOR

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Technical Characteristics

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Current Rating Per Characteristic

    5.00 amperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Voltage Rating In Volts Per Characteristic

    1500.0 maximum breakdown voltage, collector-to-base, emitter open and 1400.0 maximum breakdown voltage, collector-to-emitter, base open and 1400.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 5.0 maximum

  • Overall Height

    0.450 inches maximum

  • Power Rating Per Characteristic

    50.0 watts small-signal input power, common-collector absolute

  • Inclosure Material

    metal

  • Mounting Method

    unthreaded hole

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 pin and 1 case

  • Overall Length

    1.550 inches maximum

  • Transfer Ratio

    5.0 nominal static forward current transfer ratio, common-emitter

  • Semiconductor Material

    silicon

  • ~1

    breakdown voltage, emitter-to-base, collector open

Certified to
AS6081 Methods

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