44SE133
Semiconductor Devices and Associated Hardware
TRANSISTOR
44SE133
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.350 inches maximum
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Voltage Rating In Volts Per Characteristic
110.0 maximum breakdown voltage, collector-to-emitter, base open and 170.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 7.0 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
20.00 amperes maximum collector current, dc
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Test Data Document
03640-6133489 drawing
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Inclosure Material
metal
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
62.5 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Special Features
junction pattern arrangement: npn
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Iii Precious Material And Location
terminal surfaces gold
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Iii Precious Material
gold
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Terminal Type And Quantity
1 case and 2 pin