NH12271997
Semiconductor Devices and Associated Hardware
TRANSISTOR
NH12271997
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Overall Diameter
0.570 inches minimum and 0.610 inches maximum
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End Item Identification
ifv (xm2) cfv (xm3)
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector preset
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Nuclear Hardness Critical Feature
hardened
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Test Data Document
19200-12271997 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum
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Semiconductor Material
silicon
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Overall Length
1.330 inches maximum
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Inclosure Material
metal
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Overall Width Across Flats
0.667 inches minimum and 0.687 inches maximum
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector to base voltage/static/emitter open and 100.0 maximum collector to emitter voltage/static/base open and 8.0 maximum emitter to base voltage, static, collector open