901022

Semiconductor Devices and Associated Hardware

TRANSISTOR

901022

5961-01-102-4881

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Integrated Defense

TRANSISTOR

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Technical Characteristics

  • Overall Length

    0.328 inches minimum and 0.408 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-111

  • Features Provided

    hermetically sealed case and burn in

  • Nominal Thread Size

    0.190 inches

  • Current Rating Per Characteristic

    5.00 amperes maximum collector current, dc

  • Special Features

    junction pattern arrangement: npn

  • Thread Series Designator

    unf

  • Inclosure Material

    metal

  • Function For Which Designed

    switching

  • Mounting Facility Quantity

    1

  • Internal Configuration

    junction contact

  • Mounting Method

    threaded stud

  • Overall Width Across Flats

    0.424 inches minimum and 0.437 inches maximum

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum breakdown voltage, collector-to-emitter, base open

  • Power Rating Per Characteristic

    30.0 watts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Manufacturers Code

    33827

  • Mfr Source Controlling Reference

    901022

  • Terminal Type And Quantity

    3 tab, solder lug

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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