901022
Semiconductor Devices and Associated Hardware
TRANSISTOR
901022
5961 - Semiconductor Devices and Associated Hardware
Bae Systems Integrated Defense
TRANSISTOR
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Technical Characteristics
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Overall Length
0.328 inches minimum and 0.408 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-111
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Features Provided
hermetically sealed case and burn in
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Nominal Thread Size
0.190 inches
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Current Rating Per Characteristic
5.00 amperes maximum collector current, dc
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Special Features
junction pattern arrangement: npn
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Thread Series Designator
unf
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Inclosure Material
metal
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Function For Which Designed
switching
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Mounting Facility Quantity
1
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open
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Power Rating Per Characteristic
30.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Manufacturers Code
33827
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Mfr Source Controlling Reference
901022
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Terminal Type And Quantity
3 tab, solder lug