F5412DMQB

Technical Characteristics

• Test Data Document

  96214-537842 drawing

• Design Function And Quantity

  3 gate, nand

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic

• Features Provided

  hermetically sealed and monolithic and w/open collector and positive outputs

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Maximum Power Dissipation Rating

  30.0 milliwatts

• Body Width

  0.310 inches maximum

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time, low to high level output and 15.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  triple 3 input

• Output Logic Form

  transistor-transistor logic

• Operating Temp Range

  -55.0 to 125.0 deg celsius

• Body Height

  0.185 inches maximum

• Body Length

  0.775 inches minimum and 0.795 inches maximum