TRW2001
Semiconductor Devices and Associated Hardware
TRANSISTOR
TRW2001
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
4 flange
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Current Rating Per Characteristic
0.25 amperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Precious Material
gold
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Power Rating Per Characteristic
1.25 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Diameter
0.800 inches nominal
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Precious Material And Location
external surfaces gold
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 50.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Length
0.730 inches nominal
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Mounting Method
press fit
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Inclosure Material
metal