13-812557-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

13-812557-1

5961-01-105-3350

5961 - Semiconductor Devices and Associated Hardware

General Dynamics Advanced

TRANSISTOR

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Technical Characteristics

  • ~1

    breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown vo

  • ~2

    ltage, emitter-to-base, collector open

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.370 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Circle Diameter

    0.100 inches nominal

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum

  • Current Rating Per Characteristic

    30.00 milliamperes maximum collector current, dc

  • Power Rating Per Characteristic

    200.0 milliwatts maximum total power dissipation

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Semiconductor Material

    silicon

  • Mounting Method

    terminal

  • Internal Junction Configuration

    pnp

  • Internal Configuration

    junction contact

  • Overall Length

    0.210 inches maximum

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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