179SET102
Semiconductor Devices and Associated Hardware
TRANSISTOR
179SET102
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Internal Junction Configuration
npn
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~1
between base and emitter and 7.0 maximum emitter to base voltage,dc
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Power Rating Per Characteristic
140.0 watts maximum total power dissipation
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Overall Length
0.358 inches maximum
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Terminal Length
1.000 inches nominal
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Overall Diameter
0.800 inches maximum
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage,collector-to-emitter,base open and 90.0 maximum collector to emitter voltage/static/base open and 110.0 maximum collector to emitter reverse voltage and 120.0 maximum collector to emitter voltage,dc with specified circuit
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Current Rating Per Characteristic
50.00 amperes maximum collector current,dc and 10.00 amperes maximum base current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
1 case and 2 uninsulated wire lead