M38510/30001BDB

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Features Provided

  monolithic and schottky and hermetically sealed and low power and positive outputs

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Input Circuit Pattern

  quad 2 input

• Case Outline Source And Designator

  f-2 mil-m-38510

• Terminal Type And Quantity

  14 flat leads

• Design Function And Quantity

  4 gate, nand

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Specification/Standard Data

  81349-mil-m-38510/300/usaf/ government specification

• Inclosure Material

  ceramic

• Body Width

  0.235 inches minimum and 0.260 inches maximum

• Terminal Surface Treatment

  solder

• Body Length

  0.390 inches maximum

• Maximum Power Dissipation Rating

  24.4 milliwatts

• Body Height

  0.045 inches minimum and 0.085 inches maximum

• Time Rating Per Chacteristic

  20.00 nanoseconds maximum propagation delay time, low to high level output and 24.00 nanoseconds maximum propagation delay time, high to low level output

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• ~1

  data on certain environmental and performanc