MIL-S-19500/419
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
MIL-S-19500/419
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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~1
data on certain environmental and performanc
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Terminal Circle Diameter
0.100 inches nominal
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Precious Material
gold
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Precious Material And Location
terminal surfaces gold
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Electrode Internally-Electrically Connected To Case
gate
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: pnpn
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Specification/Standard Data
81349-mil-s-19500/419 government specification
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Voltage Rating In Volts Per Characteristic
1.5 maximum forward voltage, peak and 0.8 maximum gate trigger voltage, dc
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Current Rating Per Characteristic
200.00 microamperes forward current, total rms absolute
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Overall Length
0.170 inches minimum and 0.210 inches maximum