FBN-L200

Semiconductor Devices and Associated Hardware

TRANSISTOR

FBN-L200

5961-01-107-2018

5961 - Semiconductor Devices and Associated Hardware

Veeco Instruments Inc

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    450.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 400.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector absolute

  • Internal Junction Configuration

    npn

  • Overall Length

    0.326 inches maximum

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.830 inches maximum

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    30.00 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    1 case and 2 uninsulated wire lead

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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