582R665H04
Semiconductor Devices and Associated Hardware
TRANSISTOR
582R665H04
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
15.0 watts small-signal input power, common-collector preset
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to base voltage, dc and 300.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, instantaneous
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Terminal Length
0.500 inches minimum and 0.800 inches maximum
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Semiconductor Material
silicon
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End Item Identification
e-3a
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
terminal surface option gold
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Inclosure Material
metal
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Overall Length
0.250 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Test Data Document
97942-582r665 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Overall Diameter
0.370 inches maximum
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Current Rating Per Characteristic
2.00 amperes source cutoff current maximum